vishay siliconix si4411dy new product document number: 72149 s-70315-rev. c, 12-feb-07 www.vishay.com 1 p-channel 30-v (d-s) mosfet features ? trenchfet ? power mosfet applications ? notebook - load switch - battery switch product summary v ds (v) r ds(on) ( )i d (a) - 30 0.010 at v gs = - 10 v - 13 0.0155 at v gs = - 4.5 v - 10 s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4411DY-T1-E3 (lead (pb)-free) si4411dy-t1 s g d p-channel mosfe t notes a. surface mounted on 1" x 1" fr4 board. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 secs steady state unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) a t a = 25 c i d - 13 - 9 a t a = 70 c - 10.5 - 7.5 pulsed drain current i dm - 50 continuous source current (diode conduction) a i s - 2.7 - 1.36 maximum power dissipation a t a = 25 c p d 3.0 1.5 w t a = 70 c 1.9 0.95 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 sec r thja 33 42 c/w steady state 70 85 maximum junction-to-foot (drain) steady state r thjf 16 21 available pb-free rohs* compliant
www.vishay.com 2 document number: 72149 s-70315-rev. c, 12-feb-07 vishay siliconix si4411dy new product notes a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 70 c - 10 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 13 a 0.008 0.010 v gs = - 4.5 v, i d = - 10 a 0.0125 0.0155 forward transconductance a g fs v ds = - 15 v, i d = - 13 a 40 s diode forward voltage a v sd i s = - 2.7 a, v gs = 0 v - 0.74 - 1.1 v dynamic b total gate charge q g v ds = - 15 v, v gs = - 5 v, i d = - 13 a 43 65 nc gate-source charge q gs 8.5 gate-drain charge q gd 18.5 gate resistance r g 3.4 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 6 18 30 ns rise time t r 15 25 turn-off delay time t d(off) 140 250 fall time t f 75 120 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/s 60 100 output characteristics 0 10 20 30 40 50 012345 v gs = 10 thru 4 v v ds - drain-to-source voltage (v) - drain current (a) i d 3 v transfer characteristics 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t c = 125 c -55 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 72149 s-70315-rev. c, 12-feb-07 www.vishay.com 3 vishay siliconix si4411dy new product typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( r ds(on) ) 0.000 0.004 0.008 0.012 0.016 0.020 0 1020304050 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 1 2 3 4 5 6 0 1020304050 v ds = 15 v i d = 13 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 50 10 0.1 v sd - source-to-drain voltage (v) - source current (a) i s 1 t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 1100 2200 3300 4400 5500 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c rss c oss c iss c - capacitance (pf) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 13 a t j - junction temperature (?c) (normalized) - on-resistance r ds(on) 0.000 0.006 0.012 0.018 0.024 0.030 0246810 i d = 13 a - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 72149 s-70315-rev. c, 12-feb-07 vishay siliconix si4411dy new product typical characteristics 25 c, unless otherwise noted threshold voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 15 0 i d = 250 a variance (v) v gs(th) t j - temperature (?c) single pulse power 0 30 50 10 20 power (w) time ( sec ) 160 0 10 40 0.1 0.01 100 safe operating area, junction-to-case v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on) t c = 25 ?c single pulse 1 s 10 s dc 10 ms 1 ms normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 ?c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72149 s-70315-rev. c, 12-feb-07 www.vishay.com 5 vishay siliconix si4411dy new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?72149 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 s q uare wave pulse duration ( sec ) normalized effective transient thermal impedance
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
|
